MG50Q2YS40

Toshiba MG50Q2YS40 New IGBT: 50A1200V, MG50Q2YS40 pictures, MG50Q2YS40 price, MG50Q2YS40 supplier 
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MG50Q2YS40 Description

MG50Q2YS40 has unique and exceptional features that make it an advanced power module. Weighing at 0.45 lbs., it has a collector emitter voltage of 1200 and a collector current of 50 amperes. It has both shape and design suitable for highly demanding applications.

MG50Q2YS40 aims for high efficiency, reliability and cost-effectiveness. With a very low reverse recovery time, it is guaranteed to prevent switching responses. High temperature is also not a problem with this device. Even with a temperature as high as 150 0C, rest assured that it will still remain intact because of its excellent module construction.

MG50Q2YS40 has over current limiting function that’s three times better than the usual rated current. By minimizing internal stray inductance, its efficiency rate is further enhanced. With amazing performance and high reliability, you’re ensured of your worthy investment.

MG50Q2YS40  0.45 lbs

Target_Applications

MG50Q2YS40 could be used in High Power Switching Applications. Motor Control Applications;

Features

GTR Module Silicon N Channel IGBT
IGBT: 50A1200V