2MBI100U4A-120

The 2MBI100U4A-120-50 is a N-channel IGBT Array and Module Transistor 1200V collector-emitter voltage and 540W collector power dissipation. ��20V Gate-emitter voltage 2500VAC Isolation voltage Fuji 2MBI100U4A-120 New The 2MBI100U4A-120-50 is a N-channel IGBT Array and Module Transistor 1200V collector-emitter voltage and 540W collector power dissipation., 2MBI100U4A-120 pictures, 2MBI100U4A-120 price, 2MBI100U4A-120 supplier Email: sales@shunlongwei.com http://www.slw-ele.com/2mbi100u4a-120.html 2MBI100U4A-120-50 Transistor Polarity: N Channel DC Collector Current: 150A Collector Emitter Saturation Voltage Vce(on): 2.2V Power Dissipation Pd: 540W Collector Emitter Voltage V(br)ceo: 1.2kV Transistor Case Style: Module No. of Pins: 7Pins Operating Temperature Max: 125��C Product Range: - SVHC: To Be Advised The 2MBI100U4A-120-50 is a N-channel IGBT Array and Module Transistor 1200V collector-emitter voltage and 540W collector power dissipation. Shunlongwei Inspected every 2MBI100U4A-120 before Ship, All 2MBI100U4A-120 with 6 months warranty.