MG50Q2YS40

Toshiba MG50Q2YS40 New IGBT: 50A1200V, MG50Q2YS40 pictures, MG50Q2YS40 price, MG50Q2YS40 supplier 
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MG50Q2YS40 Description

MG50Q2YS40 has unique and exceptional features that make it an advanced power module. Weighing at 0.45 lbs., it has a collector emitter voltage of 1200 and a collector current of 50 amperes. It has both shape and design suitable for highly demanding applications.

MG50Q2YS40 aims for high efficiency, reliability and cost-effectiveness. With a very low reverse recovery time, it is guaranteed to prevent switching responses. High temperature is also not a problem with this device. Even with a temperature as high as 150 0C, rest assured that it will still remain intact because of its excellent module construction.

MG50Q2YS40 has over current limiting function that’s three times better than the usual rated current. By minimizing internal stray inductance, its efficiency rate is further enhanced. With amazing performance and high reliability, you’re ensured of your worthy investment.

MG50Q2YS40  0.45 lbs

Target_Applications

MG50Q2YS40 could be used in High Power Switching Applications. Motor Control Applications;

Features

GTR Module Silicon N Channel IGBT
IGBT: 50A1200V

MG300H1FL1

Toshiba MG300H1FL1 New 300A/600V/GTR/1U, MG300H1FL1 pictures, MG300H1FL1 price, MG300H1FL1 supplier 
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• Part Number:     
  MG300H1FL1
• Category:     
  IGBT Module
• Manufacturer:     
  Toshiba
• Packaging:     
  IGBT Module
• Data Code:     
  2016+
• Qty Available:     
  76

MG300H1FL1 Description

Darlington Independent Power Module; 300 A; 600 V.

MG300H1FL1  1.10 lbs

Target_Applications

MG300H1FL1 could be used in HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS

Features

Darlington Independent Power Module
300A/600V/GTR/1U

Shunlongwei Inspected every MG300H1FL1 before Ship, All MG300H1FL1 with 6 months warranty.

MG200J2YS50

Toshiba MG200J2YS50 New IGBT: 200A600V, MG200J2YS50 pictures, MG200J2YS50 price, MG200J2YS50 supplier 
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• Part Number:     
  MG200J2YS50
• Category:     
  IGBT Module
• Manufacturer:     
  Toshiba
• Packaging:     
  IGBT Module
• Data Code:     
  2016+
• Qty Available:     
  260

MG200J2YS50 Description

MG200J2YS50, GTR Module Silicon N Channel IGBT; Silicon N-channel IGBT GTR module for high power switching; motor control applications; 200 Amp; 600 Volt

MG200J2YS50  0.15 lbs

Target_Applications

MG200J2YS50 could be used in High Power Switching Applications Motor Control Applications

Features

GTR Module Silicon N Channel IGBT
IGBT: 200A600V

Shunlongwei Inspected every MG200J2YS50 before Ship, All MG200J2YS50 with 6 months warranty.

MG150Q2YS51

Toshiba MG150Q2YS51 New MG150Q2YS51 Toshiba GTR Module Silicon N Channel IGBT (1 PER), MG150Q2YS51 pictures, MG150Q2YS51 price, MG150Q2YS51 supplier 
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MG150Q2YS51 Description

MG150Q2YS51, GTR Module Silicon N Channel IGBT; N CHANNEL IGBT (HIGH POWER SWITCHING; MOTOR CONTROL APPLICATIONS); TRANS IGBT MODULE N-CH 1200V 200A 7(2-109C4A)

MG150Q2YS51  0.99 lbs

Target_Applications

MG150Q2YS51 could be used in High Power Switching / Motor Control Applications

Features

N Channel IGBT (High Power Switching / Motor Control Applications)
MG150Q2YS51 Toshiba GTR Module Silicon N Channel IGBT (1 PER)

Shunlongwei Inspected every MG150Q2YS51 before Ship, All MG150Q2YS51 with 6 months warranty.

MG150Q2YS50

Toshiba MG150Q2YS50 New IGBT: 150A1200V, MG150Q2YS50 pictures, MG150Q2YS50 price, MG150Q2YS50 supplier 
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Email: sales@shunlongwei.com

https://www.slw-ele.com/mg150q2ys50.html

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• Part Number:     
  MG150Q2YS50
• Category:     
  IGBT Module
• Manufacturer:     
  Toshiba
• Packaging:     
  IGBT Module
• Data Code:     
  2016+
• Qty Available:     
  321

MG150Q2YS50 Description

MG150Q2YS50 GTR Module: Silicon N-Channel IGBT; 150 Amp; 1200 Volt

MG150Q2YS50  0.56 lbs

Target_Applications

MG150Q2YS50 could be used in High Power Switching / Motor Control Applications

Features

N Channel IGBT (High Power Switching / Motor Control Applications)
IGBT: 150A1200V

Shunlongwei Inspected every MG150Q2YS50 before Ship, All MG150Q2YS50 with 6 months warranty.

MG100Q2YS51

Toshiba MG100Q2YS51 New 100A/1200V/IGBT/2U, MG100Q2YS51 pictures, MG100Q2YS51 price, MG100Q2YS51 supplier 
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MG100Q2YS51 Description

N CHANNEL IGBT (HIGH PWER SWITCHING; MOTOR CONTROL APPLICATIONS); TRANS IGBT MODULE N-CH 1200V 150A 7(2-109C4A); TRANS IGBT MODULE N-CH 1200V 150A 7(2-109C4A)

MG100Q2YS51  0.95 lbs

Target_Applications

MG100Q2YS51 could be used in High Power Switching Applications Motor Control Applications

Features

N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
100A/1200V/IGBT/2U

Shunlongwei Inspected every MG100Q2YS51 before Ship, All MG100Q2YS51 with 6 months warranty.

MG100Q2YS42

Toshiba MG100Q2YS42 New 2IGBT: 100A1200V, MG100Q2YS42 pictures, MG100Q2YS42 price, MG100Q2YS42 supplier 
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MG100Q2YS42 Description

MG100Q2YS42, Silicon N-channel IGBT GTR module for high power switching; motor control applications; TRANS IGBT MODULE N-CH 1200V 100A 7(2-109C1A); TRANS IGBT MODULE N-CH 1200V 100A 7(2-109C1A)

MG100Q2YS42  0.95 lbs

Target_Applications

MG100Q2YS42 could be used in High Power Switching Applications Motor Control Applications

Features

N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
2IGBT: 100A1200V

Shunlongwei Inspected every MG100Q2YS42 before Ship, All MG100Q2YS42 with 6 months warranty.

FRS300BA50

SanRex FRS300BA50 New 300A/500V/HighSpeedDiode/1U, FRS300BA50 pictures, FRS300BA50 price, FRS300BA50 supplier 
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FRS300BA50 Description

FRS300BA50, high speed; fast recovery; isolated diode modulde signed for high power switching application. FRS300Bi suitable for high frequency application require in low lost and high speed control.

Weight

FRS300BA50  2.23 lbs

Target_Applications

FRS300BA50 could be used in InverteWeldinPoweSupplPoweSupplfoTelecommunicatioVariouSwitchinPoweSupply.

Features

HigSpeetrr?200nIF?AV?300IsolateMountinbaseHigSurgCapability
300A/500V/HighSpeedDiode/1U

Shunlongwei Inspected every FRS300BA50 before Ship, All FRS300BA50 with 6 months warranty.

FP15R12YT3

EUPEC FP15R12YT3 New IGBT Modules N-CH 1.2KV 25A;15A/1200V/PIM, FP15R12YT3 pictures, FP15R12YT3 price, FP15R12YT3 supplier
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Manufacturer: Infineon  FP15R12YT3
Product Category: IGBT Modules
RoHS: YES
Product: IGBT Silicon Modules
Configuration: Array 7
Collector- Emitter Voltage VCEO Max: 1200 V
Continuous Collector Current at 25 C: 25 A
Maximum Operating Temperature: + 125 C
Package / Case: EASY2
Packaging: Tray
Brand: Infineon Technologies
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 20

IGBT Modules N-CH 1.2KV 25A;15A/1200V/PIM

Shunlongwei Inspected every FP15R12YT3 before Ship, All FP15R12YT3 with 6 months warranty.

FF300R12KE3

Infineon FF300R12KE3 New IGBT Modules 1200V 300A DUAL, FF300R12KE3 pictures, FF300R12KE3 price, FF300R12KE3 supplier 
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Product Category: IGBT Modules  FF300R12KE3 FF300R12KE3

Manufacturer: Infineon

RoHS: YES

Configuration: Dual

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 300 A

Gate-Emitter Leakage Current: 400 nA

Pd - Power Dissipation: 1450 W

Package / Case: IS5a ( 62 mm )-7

Maximum Operating Temperature: + 125 C

Brand: Infineon Technologies

Height: 30.9 mm

Length: 106.4 mm

Maximum Gate Emitter Voltage: +/- 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Factory Pack Quantity: 10

Width: 61.4 mm

 

IGBT Modules 1200V 300A DUAL

Shunlongwei Inspected every FF300R12KE3 before Ship, All FF300R12KE3 with 6 months warranty.

FF200R12KS4

Infineon FF200R12KS4 New IGBT Modules 1200V 200A DUAL , FF200R12KS4 pictures, FF200R12KS4 price, FF200R12KS4 supplier
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Product Category: IGBT Modules  FF200R12KS4
Manufacturer: Infineon
RoHS: YES
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 3.2 V
Continuous Collector Current at 25 C: 275 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 1.4 kW
Package / Case: 62 mm
Maximum Operating Temperature: + 125 C
Brand: Infineon Technologies
Height: 30.5 mm
Length: 106.4 mm
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 1FF200R12KS4
IGBT Modules 1200V 200A DUAL

Shunlongwei Inspected every FF200R12KS4 before Ship, All FF200R12KS4 with 6 months warranty.

FF200R12KE3

Infineon FF200R12KE3 New IGBT Modules 1200V 200A DUAL , FF200R12KE3 pictures, FF200R12KE3 price, FF200R12KE3 supplier 
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FF200R12KE3 

Product Category: IGBT Modules  FF200R12KE3

Manufacturer: Infineon

RoHS: YES

Configuration: Dual

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 200 A

Gate-Emitter Leakage Current: 400 nA

Pd - Power Dissipation: 1.05 kW

Package / Case: IS5a ( 62 mm )-7

Maximum Operating Temperature: + 125 C

Brand: Infineon Technologies

Height: 30.9 mm

Length: 106.4 mm

Maximum Gate Emitter Voltage: +/- 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Factory Pack Quantity: 10

Width: 61.4 mm

 

IGBT Modules 1200V 200A DUAL

Shunlongwei Inspected every FF200R12KE3 before Ship, All FF200R12KE3 with 6 months warranty.

EVL31-050

Fuji EVL31-050 New 100A/600V/GTR, EVL31-050 pictures, EVL31-050 price, EVL31-050 supplier 
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EVL31-050 Description

EVL31-050 is an IGBT power module from Fuji, the trusted name for bipolar power modules used in industrial applications such as AC motors and drives. EVL31-050 features free wheel diodes, high DC current gain, insulated packaging to protect against overheating of the device, and isolated mounting system.

EVL31-050  5.34 lbs

Target_Applications

EVL31-050 could be used in High Power Switching Uninterruptible Power Supply D.C Motor Controls Wielding Machines

Features

High Current High D.C. Current Gain Insulated Type
100A/600V/GTR

Shunlongwei Inspected every EVL31-050 before Ship, All EVL31-050 with 6 months warranty.